DTD113ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mount :

Surface Mount

Transistor Type :

NPN - Pre-Biased

HTS Code :

8541.21.00.75

VCEsat-Max :

0.3 V

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Power - Max :

200mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Published :

2016

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

200MHz

Number of Elements :

1

Resistor - Base (R1) :

1 k Ω

Reach Compliance Code :

not_compliant

Factory Lead Time :

13 Weeks

Max Collector Current :

500mA

Frequency - Transition :

200MHz

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature (Max) :

150°C

Max Power Dissipation :

200mW

JESD-30 Code :

R-PDSO-G3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

1 k Ω