DTD114ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

300mV

Power - Max :

200mW

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

200MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Mount :

Surface Mount

Number of Terminations :

3

Max Breakdown Voltage :

50V

Max Collector Current :

500mA

ECCN Code :

EAR99

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Transistor Type :

NPN - Pre-Biased

Qualification Status :

Not Qualified

Transition Frequency :

200MHz

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

10 k Ω

VCEsat-Max :

0.3 V

Transistor Application :

SWITCHING

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code :

8541.21.00.75

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN