DTD113EKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

1 k Ω

Terminal Position :

Dual

Published :

2011

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Transistor Application :

SWITCHING

Element Configuration :

Single

Operating Supply Voltage :

50V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

1 k Ω

Transition Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Elements :

1

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e1

Continuous Collector Current :

500mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Max Output Current :

500mA

Max Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Base Part Number :

DTD113

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Radiation Hardening :

No

Number of Pins :

3

Polarity :

NPN

Factory Lead Time :

13 Weeks

Min Operating Temperature :

-55°C

Current Rating :

500mA

HTS Code :

8541.21.00.75

Max Collector Current :

500mA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation :

200mW

Frequency - Transition :

200MHz

Termination :

SMD/SMT

hFE Min :

33