DTD113EKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

300mV

Element Configuration :

Single

Lead Free :

Lead Free

Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Pbfree Code :

yes

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Rated DC :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Output Current :

500mA

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

50V

Factory Lead Time :

13 Weeks

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

33

Pin Count :

3

Number of Pins :

3

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Base Part Number :

DTD113

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Gull wing

Resistor - Base (R1) :

1 k Ω

Transition Frequency :

200MHz

Frequency - Transition :

200MHz

Resistor - Emitter Base (R2) :

1 k Ω

Current Rating :

500mA

Max Power Dissipation :

200mW

Continuous Collector Current :

500mA

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Max Operating Temperature :

150°C

Polarity :

NPN

Mount :

Surface Mount

Number of Elements :

1

HTS Code :

8541.21.00.75

Max Collector Current :

500mA

Transistor Application :

SWITCHING

Transistor Type :

NPN - Pre-Biased

Published :

2011