DTD113ZUT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

hFE Min :

82

Current - Collector Cutoff (Max) :

500nA

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 50mA 5V

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

200MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Terminal Position :

Dual

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Base Part Number :

DTD113

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

NPN - Pre-Biased

Current Rating :

500mA

Published :

1998

Power Dissipation :

200mW

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Package / Case :

SC-70, SOT-323

Min Operating Temperature :

-55°C

Mount :

Surface Mount

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

10

Resistor - Base (R1) :

1 k Ω

Terminal Form :

Gull wing

Max Power Dissipation :

200mW

Radiation Hardening :

No

Number of Terminations :

3

Max Collector Current :

500mA

Pin Count :

3

ECCN Code :

EAR99

Element Configuration :

Single

Transition Frequency :

200MHz

Packaging :

Tape and Reel (TR)