IXTA140P05T
- Mfr.Part #
- IXTA140P05T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 140A TO263
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 2
- Number of Channels :
- 1 Channel
- Vgs (Max) :
- ±15V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 140 A
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSSO-G2
- Transistor Polarity :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Continuous Drain Current Id :
- 140A
- Mount :
- Surface Mount
- Base Product Number :
- IXTA140
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 70A, 10V
- Drain to Source Voltage (Vdss) :
- 50V
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 15V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 298W Tc
- Terminal Position :
- Single
- Mounting Style :
- SMD/SMT
- Package :
- Tube
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 13500pF @ 25V
- Qualification :
- -
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Supplier Device Package :
- TO-263 (IXTA)
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- FET Feature :
- --
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 298 W
- Pulsed Drain Current-Max (IDM) :
- 420A
- Factory Lead Time :
- 28 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.009Ohm
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 298W
- FET Type :
- P-Channel
- Series :
- TrenchP™
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 50V
- Lead Free :
- Lead Free
- Product Status :
- Active
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Channel Type :
- P Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-263AB
- Power Dissipation (Max) :
- 298W (Tc)
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Continuous Drain Current (ID) :
- 140A
- Pin Count :
- 4
- Datasheets
- IXTA140P05T

P-Channel Tube 9m Ω @ 70A, 10V ±15V 13500pF @ 25V 200nC @ 10V 50V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA140P05T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 13500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 140A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 140 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 420A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.For normal operation, maintain the DS breakdown voltage above 50V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA140P05T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 420A.
a 50V drain to source voltage (Vdss)
IXTA140P05T Applications
There are a lot of IXYS
IXTA140P05T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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