IXTA2N100P
- Mfr.Part #
- IXTA2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO263
- Stock
- 292
- In Stock :
- 292
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Pin Count :
- 4
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Rise Time :
- 29ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.65 mm
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 27 ns
- Continuous Drain Current (ID) :
- 2A
- Element Configuration :
- Single
- FET Feature :
- --
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Series :
- Polar™
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 4.83 mm
- Surface Mount :
- yes
- Power Dissipation-Max (Abs) :
- 86 W
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Length :
- 10.41 mm
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 1kV
- DS Breakdown Voltage-Min :
- 1000 V
- Published :
- 2008
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Number of Terminals :
- 2
- Product Type :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-263AB
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 86W
- Mounting Style :
- SMD/SMT
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 86W (Tc)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Supplier Device Package :
- TO-263 (IXTA)
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Base Product Number :
- IXTA2
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 7.5 Ω
- Power Dissipation-Max :
- 86W Tc
- Drain Current-Max (Abs) (ID) :
- 2A
- Turn-Off Delay Time :
- 80 ns
- Pulsed Drain Current-Max (IDM) :
- 5A
- Configuration :
- Single
- Package :
- Tube
- Datasheets
- IXTA2N100P

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA2N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 655pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTA2N100P Applications
There are a lot of IXYS
IXTA2N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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