IXTA3N110

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

12A

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Rds On Max :

4 Ω

Maximum Operating Temperature :

+ 150 C

Surface Mount :

yes

FET Type :

N-Channel

Series :

--

Base Product Number :

IXTA3

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation-Max :

150W Tc

Product Status :

Obsolete

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Max Operating Temperature :

150 °C

Min Operating Temperature :

-55 °C

Max Power Dissipation :

200 W

Element Configuration :

Single

Transistor Element Material :

SILICON

Brand :

IXYS

Drain-source On Resistance-Max :

4 Ω

DS Breakdown Voltage-Min :

1100 V

Case Connection :

DRAIN

Length :

9.9 mm

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Pbfree Code :

yes

FET Feature :

--

Vgs (Max) :

±20V

Width :

9.2 mm

RoHS :

Compliant

Pin Count :

4

Power Dissipation (Max) :

150W (Tc)

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

1100V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

RoHS Status :

ROHS3 Compliant

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

JEDEC-95 Code :

TO-263AB

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Drain to Source Resistance :

4 Ω

Factory Lead Time :

28 Weeks

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

1.1kV

Height :

4.5 mm

Power Dissipation :

150W

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.5A, 10V

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Manufacturer :

IXYS

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance :

1.35 nF

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Resistance :

4.5Ohm

Rise Time :

15ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Turn-Off Delay Time :

32 ns

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2001

Configuration :

Single

Number of Elements :

1

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

700 mJ

Supplier Device Package :

TO-263 (IXTA)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)