IXTA3N60P

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Mfr.Part #
IXTA3N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO263
Stock
70
In Stock :
70

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Rise Time :
25ns
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
58 ns
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
600V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
100 mJ
Terminal Position :
Single
Voltage - Rated DC :
600V
JEDEC-95 Code :
TO-263AB
Fall Time (Typ) :
22 ns
Polarity/Channel Type :
N-Channel
Factory Lead Time :
8 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
3A
Mount :
Surface Mount
FET Type :
N-Channel
Current Rating :
3A
Supplier Device Package :
TO-263 (IXTA)
Product Status :
Obsolete
Power Dissipation-Max :
70W Tc
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Power Dissipation :
70W
JESD-609 Code :
e3
Manufacturer :
IXYS Corporation
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Transistor Application :
SWITCHING
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
3A
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Pin Count :
4
Drain to Source Breakdown Voltage :
600V
Package :
Tube
Number of Terminals :
2
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTA3
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Pulsed Drain Current-Max (IDM) :
6A
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Number of Elements :
1
FET Feature :
--
DS Breakdown Voltage-Min :
600 V
JESD-30 Code :
R-PSSO-G2
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
2.9 Ω
Series :
PolarHV™
Reach Compliance Code :
not_compliant
Surface Mount :
yes
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Case Connection :
DRAIN
Lead Free :
Lead Free
Datasheets
IXTA3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N60P from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTA3N60P pinout, IXTA3N60P datasheet PDF, IXTA3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA3N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 411pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTA3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)


IXTA3N60P Applications


There are a lot of IXYS
IXTA3N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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