IXTA50N20P

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Mfr.Part #
IXTA50N20P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO263
Stock
300
In Stock :
300

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTA50
Height :
4.83 mm
Continuous Drain Current (ID) :
50A
Product Type :
MOSFET
Pin Count :
4
Number of Elements :
1
ECCN Code :
EAR99
Factory Lead Time :
28 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Terminals :
2
Width :
10.41 mm
FET Feature :
--
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.06Ohm
Published :
2008
Drain to Source Voltage (Vdss) :
200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Fall Time (Typ) :
30 ns
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
not_compliant
Vgs (Max) :
±20V
Series :
PolarHT™
JESD-30 Code :
R-PSSO-G2
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
200V
Brand :
IXYS
Manufacturer :
IXYS
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn-Off Delay Time :
70 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
120A
Drain Current-Max (Abs) (ID) :
50 A
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Surface Mount :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
Product Status :
Active
Type :
PolarHT Power MOSFET
Packaging :
Tube
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Maximum Operating Temperature :
+ 175 C
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Rise Time :
35ns
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
Configuration :
Single
Power Dissipation-Max (Abs) :
360 W
Product Category :
MOSFET
Qualification Status :
Not Qualified
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-263AB
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Terminal Finish :
Matte Tin (Sn)
Additional Feature :
AVALANCHE RATED
Tradename :
PolarHT
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
60m Ω @ 50A, 10V
Power Dissipation :
360W
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Element Configuration :
Single
DS Breakdown Voltage-Min :
200 V
Power Dissipation-Max :
360W Tc
Package Shape :
RECTANGULAR
FET Type :
N-Channel
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXTA)
Power Dissipation (Max) :
360W (Tc)
Length :
9.65 mm
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
SMD/SMT
Number of Terminations :
2
Datasheets
IXTA50N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Type:PolarHT Power MOSFET, Number of Channels:1 Channel, Number of Terminations:2, IXTA50N20P pinout, IXTA50N20P datasheet PDF, IXTA50N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTA50N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTA50N20P


N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA50N20P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTA50N20P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)


IXTA50N20P Applications


There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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