IXTA50N20P
- Mfr.Part #
- IXTA50N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 50A TO263
- Stock
- 300
- In Stock :
- 300
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTA50
- Height :
- 4.83 mm
- Continuous Drain Current (ID) :
- 50A
- Product Type :
- MOSFET
- Pin Count :
- 4
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Factory Lead Time :
- 28 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Terminals :
- 2
- Width :
- 10.41 mm
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.06Ohm
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 200V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 30 ns
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Series :
- PolarHT™
- JESD-30 Code :
- R-PSSO-G2
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 70 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 120A
- Drain Current-Max (Abs) (ID) :
- 50 A
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Product Status :
- Active
- Type :
- PolarHT Power MOSFET
- Packaging :
- Tube
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 175 C
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Rise Time :
- 35ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 360 W
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-263AB
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- PolarHT
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 50A, 10V
- Power Dissipation :
- 360W
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 200 V
- Power Dissipation-Max :
- 360W Tc
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-263 (IXTA)
- Power Dissipation (Max) :
- 360W (Tc)
- Length :
- 9.65 mm
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Number of Terminations :
- 2
- Datasheets
- IXTA50N20P

N-Channel Tube 60m Ω @ 50A, 10V ±20V 2720pF @ 25V 70nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA50N20P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 2720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 50 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTA50N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)
IXTA50N20P Applications
There are a lot of IXYS
IXTA50N20P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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