IXTA50N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.05Ohm

Drain Current-Max (Abs) (ID) :

50 A

Width :

10.41 mm

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

250V

Rise Time :

25 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-263AB

Continuous Drain Current (ID) :

50A

Power Dissipation (Max) :

400W (Tc)

Number of Terminals :

2

Manufacturer :

IXYS

Mounting Type :

Surface Mount

Number of Terminations :

2

Transistor Application :

SWITCHING

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Package :

Tube

Series :

--

Pulsed Drain Current-Max (IDM) :

130 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

30 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Type :

Trench Gate Power MOSFET

FET Feature :

--

FET Type :

N-Channel

Product Status :

Active

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 1mA

Product Category :

MOSFET

JESD-609 Code :

e3

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Finish :

PURE TIN

Supplier Device Package :

TO-263 (IXTA)

Height :

4.83 mm

Tradename :

HiPerFET

Reach Compliance Code :

Unknown

Base Product Number :

IXTA50

Packaging :

Tube

Number of Pins :

3

Transistor Polarity :

N-Channel

Brand :

IXYS

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Length :

9.65 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 25A, 10V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Drain to Source Voltage (Vdss) :

250V

Avalanche Energy Rating (Eas) :

1500 mJ

Channel Mode :

Enhancement

Power Dissipation-Max (Abs) :

400 W

Maximum Operating Temperature :

+ 150 C

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Number of Elements :

1

Mounting Style :

SMD/SMT

Power Dissipation-Max :

400W Tc

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Mount :

Surface Mount