IXTA52P10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

300 W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Transistor Polarity :

P-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

SMD/SMT

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2845pF @ 25V

Published :

2008

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.05Ohm

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

300W Tc

ECCN Code :

EAR99

Product Category :

MOSFET

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

130A

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1500 mJ

Rds On (Max) @ Id, Vgs :

50m Ω @ 500mA, 10V

Series :

PolarP™

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Drain to Source Resistance :

50 mΩ

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXTA52

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Brand :

IXYS

Rds On Max :

50 mΩ

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

52A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

2.845 nF

Configuration :

Single

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Height :

4.83 mm

Pbfree Code :

yes

Packaging :

Tube

Supplier Device Package :

TO-263 (IXTA)

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Length :

10.41 mm

Factory Lead Time :

17 Weeks

Transistor Type :

1 P-Channel

Number of Channels :

1 Channel

Power Dissipation :

300W

RoHS :

Compliant

Fall Time (Typ) :

22 ns

Width :

9.65 mm

Package :

Tube

Rise Time :

29ns

Drain to Source Breakdown Voltage :

-100V

Max Operating Temperature :

150 °C

Number of Terminations :

2

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

FET Type :

P-Channel

Turn-Off Delay Time :

38 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mount :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

Terminal Finish :

Matte Tin (Sn)