IXTA5N60P
- Mfr.Part #
- IXTA5N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO263
- Stock
- 21,573
- In Stock :
- 21,573
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 100W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14.2nC @ 10V
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 1.7 Ω @ 2.5A, 10V
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 1.7 Ω
- Number of Terminals :
- 2
- Supplier Device Package :
- TO-263 (IXTA)
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 600 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-263AB
- Current Rating :
- 5A
- Continuous Drain Current (ID) :
- 5A
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 10A
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 55 ns
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Manufacturer :
- IXYS Corporation
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Published :
- 2006
- Voltage - Rated DC :
- 600V
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 5A
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pin Count :
- 4
- Series :
- PolarHV™
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation :
- 100W
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Pure Tin (Sn)
- Number of Elements :
- 1
- Fall Time (Typ) :
- 17 ns
- Rise Time :
- 24ns
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXTA5
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Power Dissipation (Max) :
- 100W (Tc)
- Package :
- Tube
- Packaging :
- Tube
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Terminations :
- 2
- Datasheets
- IXTA5N60P

N-Channel Tube 1.7 Ω @ 2.5A, 10V ±30V 750pF @ 25V 14.2nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA5N60P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 360 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 750pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Peak drain current for this device is 10A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTA5N60P Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 10A.
a 600V drain to source voltage (Vdss)
IXTA5N60P Applications
There are a lot of IXYS
IXTA5N60P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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