IXTA76N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Transistor Element Material :

SILICON

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

1500 mJ

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Packaging :

Tube

Pin Count :

4

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Package Shape :

RECTANGULAR

Rise Time :

25ns

Width :

10.41 mm

Package :

Tube

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

76A

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

76 A

Drain to Source Voltage (Vdss) :

250V

Manufacturer :

IXYS

ECCN Code :

EAR99

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

30 Weeks

Lead Free :

Lead Free

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

- 55 C

Series :

-

Terminal Form :

Gull wing

Power Dissipation-Max :

460W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Drain-source On Resistance-Max :

0.039Ohm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

39m Ω @ 500mA, 10V

Number of Terminals :

2

Terminal Position :

Single

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 1mA

JEDEC-95 Code :

TO-263AB

Transistor Type :

1 N-Channel

FET Feature :

-

Fall Time (Typ) :

29 ns

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263 (IXTA)

Turn-Off Delay Time :

56 ns

Tradename :

HiPerFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

250V

Number of Channels :

1 Channel

Surface Mount :

yes

Length :

9.65 mm

Power Dissipation (Max) :

460W (Tc)

Type :

Trench Power MOSFET

Pulsed Drain Current-Max (IDM) :

170A

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

460 W

Configuration :

Single

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Qualification Status :

Not Qualified

Base Product Number :

IXTA76

Height :

4.83 mm

Power Dissipation :

460W

Product Type :

MOSFET

Pbfree Code :

yes

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

250 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V