IXTA86N20T
- Mfr.Part #
- IXTA86N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 86A TO263
- Stock
- 23,021
- In Stock :
- 23,021
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance :
- 4.5 nF
- Power Dissipation-Max :
- 480W Tc
- Published :
- 2006
- Base Product Number :
- IXTA86
- Maximum Operating Temperature :
- + 175 C
- Rds On Max :
- 29 mΩ
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 480W
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Pin Count :
- 4
- Mounting Style :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- FET Feature :
- --
- Subcategory :
- MOSFETs
- RoHS :
- Compliant
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-263 (IXTA)
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 500mA, 10V
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Operating Temperature :
- 175 °C
- Drain to Source Voltage (Vdss) :
- 200V
- Continuous Drain Current (ID) :
- 86A
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 260A
- Additional Feature :
- AVALANCHE RATED
- Series :
- --
- Drain-source On Resistance-Max :
- 0.029Ohm
- Brand :
- IXYS
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Factory Lead Time :
- 30 Weeks
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 480W (Tc)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Type :
- N-Channel
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Max Power Dissipation :
- 480 W
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Drain to Source Resistance :
- 29 mΩ
- Package :
- Tube
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Datasheets
- IXTA86N20T

N-Channel Tube 29m Ω @ 500mA, 10V ±30V 4500pF @ 25V 90nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA86N20T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 86A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 29 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTA86N20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 86A
a drain-to-source breakdown voltage of 200V voltage
based on its rated peak drain current 260A.
single MOSFETs transistor is 29 mΩ
a 200V drain to source voltage (Vdss)
IXTA86N20T Applications
There are a lot of IXYS
IXTA86N20T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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