IXTA96P085T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

96A

Number of Elements :

1

Product Type :

MOSFET

Transistor Type :

1 P-Channel

Fall Time (Typ) :

22 ns

Factory Lead Time :

28 Weeks

Turn-Off Delay Time :

45 ns

Number of Terminations :

2

Number of Terminals :

2

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Configuration :

Single

Base Product Number :

IXTA96

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Manufacturer :

IXYS

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

13m Ω @ 48A, 10V

RoHS Status :

ROHS3 Compliant

Series :

TrenchP™

Brand :

IXYS

Pbfree Code :

yes

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.013 Ω

Surface Mount :

yes

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

85V

Rise Time :

34ns

Power Dissipation-Max (Abs) :

298 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.65 mm

Pulsed Drain Current-Max (IDM) :

300A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-85V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Channel Type :

P Channel

Mount :

Surface Mount

Polarity/Channel Type :

P-Channel

Number of Channels :

1 Channel

Vgs (Max) :

±15V

Power Dissipation :

298W

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Power Dissipation (Max) :

298W (Tc)

Package :

Tube

DS Breakdown Voltage-Min :

85 V

Length :

10.41 mm

Package Shape :

RECTANGULAR

Qualification :

-

Qualification Status :

Not Qualified

Supplier Device Package :

TO-263 (IXTA)

Pin Count :

4

Height :

4.83 mm

Gate to Source Voltage (Vgs) :

15V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

13100pF @ 25V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

96 A

Continuous Drain Current Id :

96A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Element Configuration :

Single

Packaging :

Tube

Transistor Polarity :

P-Channel

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Published :

2010

Product Status :

Active

FET Type :

P-Channel

JEDEC-95 Code :

TO-263AB

Avalanche Energy Rating (Eas) :

1000 mJ

Power Dissipation-Max :

298W Tc