IXTN60N50L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

735 W

ECCN Code :

EAR99

Supplier Device Package :

SOT-227B

Qualification Status :

Not Qualified

Power Dissipation (Max) :

735W (Tc)

Package / Case :

SOT-227-4, miniBLOC

Manufacturer :

IXYS

Transistor Application :

SWITCHING

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

4

Terminal Finish :

Nickel (Ni)

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

150A

Tradename :

Linear L2

Drain-source On Resistance-Max :

0.1Ohm

Product Status :

Active

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Height :

12.22 mm

Power Dissipation-Max :

735W Tc

FET Type :

N-Channel

Additional Feature :

UL RECOGNIZED

Brand :

IXYS

Product :

Power MOSFET Modules

Number of Terminations :

4

Rise Time :

40 ns

Type :

Linear Power MOSFET

Avalanche Energy Rating (Eas) :

3000 mJ

Mounting Type :

Chassis Mount

RoHS :

Details

Vgs (Max) :

±30V

JESD-30 Code :

R-PUFM-X4

Base Product Number :

IXTN60

Terminal Form :

UNSPECIFIED

Product Category :

Discrete Semiconductor Modules

Mounting Style :

Chassis Mount

Width :

25.42 mm

REACH SVHC :

No SVHC

Length :

38.23 mm

Threshold Voltage :

2.5V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

735W

Number of Elements :

1

Series :

Linear L2™

Rds On (Max) @ Id, Vgs :

100m Ω @ 30A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

RoHS Status :

ROHS3 Compliant

Terminal Position :

UPPER

Package Shape :

RECTANGULAR

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

Mount :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Published :

2009

Nominal Vgs :

2.5 V

Continuous Drain Current (ID) :

53A

Case Connection :

Isolated

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

Maximum Operating Temperature :

+ 150 C

Product Type :

Discrete Semiconductor Modules

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Factory Lead Time :

28 Weeks

Gate Charge (Qg) (Max) @ Vgs :

610nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Pins :

4

Polarity/Channel Type :

N-Channel