IXTN90N25L2

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Mfr.Part #
IXTN90N25L2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 250V 90A SOT227B
Stock
451
In Stock :
451

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max (Abs) :
735 W
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Terminal Position :
UPPER
Package Shape :
RECTANGULAR
Power Dissipation :
735W
Transistor Element Material :
SILICON
Resistance :
33mOhm
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
735W (Tc)
Brand :
IXYS
JESD-30 Code :
R-PUFM-X4
Pin Count :
4
Published :
2009
Series :
Linear L2™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
250V
Type :
Linear Power MOSFET
Drain-source On Resistance-Max :
0.033 Ω
FET Feature :
--
Terminal Form :
UNSPECIFIED
Pulsed Drain Current-Max (IDM) :
360A
Number of Terminations :
4
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Chassis Mount
Avalanche Energy Rating (Eas) :
3000 mJ
Case Connection :
Isolated
Configuration :
Single
Pbfree Code :
yes
Package / Case :
SOT-227-4, miniBLOC
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Supplier Device Package :
SOT-227B
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
4
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
90A
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
90 A
RoHS :
Details
Manufacturer :
IXYS
Lead Free :
Lead Free
Product Category :
Discrete Semiconductor Modules
Product Status :
Active
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
250 V
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Factory Lead Time :
28 Weeks
Vgs (Max) :
±20V
Mounting Type :
Chassis Mount
Base Product Number :
IXTN90
Number of Pins :
4
Product Type :
Discrete Semiconductor Modules
Mounting Style :
Chassis Mount
Product :
Power MOSFET Modules
Number of Channels :
1 Channel
Gate Charge (Qg) (Max) @ Vgs :
640nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
250V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
735W Tc
Package :
Tube
Terminal Finish :
Nickel (Ni)
Datasheets
IXTN90N25L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 from Xinshop,where excellence meets affordability. This product stands out with its Type:Linear Power MOSFET, Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Pins:4, Number of Channels:1 Channel, IXTN90N25L2 pinout, IXTN90N25L2 datasheet PDF, IXTN90N25L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTN90N25L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTN90N25L2


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V SOT-227-4, miniBLOC

IXTN90N25L2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 23000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.As shown in the table below, the drain current of this device is 90 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 360A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTN90N25L2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360A.
a 250V drain to source voltage (Vdss)


IXTN90N25L2 Applications


There are a lot of IXYS
IXTN90N25L2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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