MS1202

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Bulk

Operating Temperature :

200°C TJ

Transistor Application :

AMPLIFIER

Gain :

8.4dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 100mA 5V

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

35V

Mount :

Chassis Mount, Stud

Power - Max :

15W

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Max Power Dissipation :

15W

Mounting Type :

Chassis Mount

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Highest Frequency Band :

VERY HIGH FREQUENCY B

RoHS Status :

RoHS Compliant

Case Connection :

Emitter

Pin Count :

4

Number of Terminations :

4

Frequency - Transition :

118MHz~136MHz

Collector-Base Capacitance-Max :

15pF

Transistor Type :

NPN

Transistor Element Material :

SILICON

Max Collector Current :

1A

Published :

2003

Additional Feature :

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Package / Case :

M135

Terminal Position :

Radial

Collector Base Voltage (VCBO) :

65V

Number of Elements :

1

Configuration :

Single

ECCN Code :

EAR99

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

35V