MS1226

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

HIGH FREQUENCY B

Packaging :

Bulk

Number of Elements :

1

Mount :

Chassis Mount, Screw

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA 5V

Collector Emitter Breakdown Voltage :

36V

Transistor Type :

NPN

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Polarity/Channel Type :

NPN

Operating Temperature :

200°C TJ

Configuration :

Single

Number of Terminations :

4

Max Collector Current :

4.5A

Collector Emitter Voltage (VCEO) :

36V

Published :

1998

Pin Count :

4

Additional Feature :

High Reliability

Number of Pins :

4

Collector-Base Capacitance-Max :

65pF

Mounting Type :

Chassis Mount

Frequency - Transition :

30MHz

Terminal Position :

Radial

Package / Case :

M113

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Collector Base Voltage (VCBO) :

65V

Max Power Dissipation :

80W

Terminal Form :

Flat

Pbfree Code :

No

Gain :

18dB

Max Frequency :

30MHz

Factory Lead Time :

32 Weeks

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)