MS1227

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

4

Max Collector Current :

4.5A

Max Frequency :

30MHz

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

18V

Packaging :

Bulk

Number of Elements :

1

Frequency - Transition :

30MHz

Max Power Dissipation :

80W

JESD-609 Code :

e0

Terminal Position :

Radial

Transistor Element Material :

SILICON

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 5V

ECCN Code :

EAR99

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Mount :

Chassis Mount, Screw

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

18V

Pin Count :

4

Package / Case :

M113

Highest Frequency Band :

HIGH FREQUENCY B

RoHS Status :

RoHS Compliant

Number of Pins :

4

Collector Base Voltage (VCBO) :

36V

Operating Temperature :

200°C TJ

Collector-Base Capacitance-Max :

135pF

Lead Free :

Lead Free

Terminal Form :

Flat

Mounting Type :

Chassis Mount

Gain :

15dB

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Output Power :

20W

Polarity/Channel Type :

NPN

Configuration :

Single