NDS355N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Fall Time (Typ) :

14 ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Power Dissipation :

500mW

Resistance :

125mOhm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

10 Weeks

Number of Channels :

1

Weight :

30mg

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

1.6A

Transistor Application :

SWITCHING

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current Rating :

1.6A

Pbfree Code :

yes

Power Dissipation-Max :

500mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

245pF @ 10V

Element Configuration :

Single

Rise Time :

14ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Published :

1998

Rds On (Max) @ Id, Vgs :

85m Ω @ 1.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

12 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3