NTE215
- Mfr.Part #
- NTE215
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO3P
- Stock
- 997
- In Stock :
- 997
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 60 W
- Terminal Form :
- THROUGH-HOLE
- Frequency - Transition :
- 20MHz
- Transistor Type :
- NPN - Darlington
- HTS Code :
- 8541.29.00.95
- DC Current Gain-Min (hFE) :
- 1500
- Current - Collector (Ic) (Max) :
- 8 A
- Collector Current-Max (IC) :
- 8 A
- Series :
- -
- Operating Temperature :
- 150°C (TJ)
- Reach Compliance Code :
- Unknown
- Pin Count :
- 2
- Subcategory :
- Other Transistors
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Product Status :
- Active
- Manufacturer :
- NTE Electronics
- Collector-Emitter Voltage-Max :
- 100 V
- Case Connection :
- COLLECTOR
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation Ambient-Max :
- 60 W
- Package :
- Bag
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package / Case :
- TO-3P-3, SC-65-3
- Supplier Device Package :
- TO-3P
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 4A, 3V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 8mA, 4A
- Power - Max :
- 2.5 W
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Datasheets
- NTE215

NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN TO-3P-3, SC-65-3 Through Hole
NTE215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1500 @ 4A, 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.100 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 100 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
NTE215 Features
the DC current gain for this device is 1500 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of TO-3P
NTE215 Applications
There are a lot of NTE Electronics, Inc
NTE215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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