NTE219

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

150 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A, 4V

Series :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Operating Temperature Classification :

Military

JESD-30 Code :

O-MBFM-P2

Power - Max :

115 W

Vce Saturation (Max) @ Ib, Ic :

3V @ 3.3A, 10A

DC Current Gain :

20

Output Power :

Not Required(W)

Frequency :

2.5(MHz)

Product Status :

Active

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

15 A

Package / Case :

TO-204AA, TO-3

Pin Count :

2 +Tab

Transistor Type :

PNP

Number of Elements :

1

Terminal Position :

BOTTOM

Current - Collector Cutoff (Max) :

700µA

Frequency - Transition :

2.5MHz

Case Connection :

COLLECTOR

Rad Hardened :

No

Voltage - Collector Emitter Breakdown (Max) :

60 V

Power Dissipation Ambient-Max :

115 W

Subcategory :

Other Transistors

Reach Compliance Code :

Unknown

DC Current Gain-Min (hFE) :

5

Power Dissipation :

115(W)

Mounting :

Through Hole

Package :

Bag

Package Type :

TO-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

2

Transistor Application :

SWITCHING

Surface Mount :

No

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Operating Temp Range :

-65C to 200C

Collector Current-Max (IC) :

15 A

ECCN Code :

EAR99

Collector-Emitter Voltage-Max :

60 V

Terminal Form :

PIN/PEG

Configuration :

Single

Polarity/Channel Type :

PNP

Supplier Device Package :

TO-3

Collector Current (DC) :

15(A)

JEDEC-95 Code :

TO-3

Transistor Polarity :

PNP

Collector-Base Voltage :

100(V)

Emitter-Base Voltage :

7(V)

Category :

Bipolar Power

Package Shape :

Round