NTE227

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

100 mA

Product Status :

Active

Operating Temperature :

150°C (TJ)

Current - Collector Cutoff (Max) :

100nA (ICBO)

Configuration :

Single

Qualification Status :

Not Qualified

Power - Max :

850 mW

Series :

-

Vce Saturation (Max) @ Ib, Ic :

1V @ 2mA, 20mA

JESD-30 Code :

O-PBCY-T3

Transistor Element Material :

SILICON

Number of Terminals :

3

Manufacturer :

NTE Electronics

DC Current Gain-Min (hFE) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V

Terminal Form :

THROUGH-HOLE

Power Dissipation Ambient-Max :

2 W

Polarity/Channel Type :

NPN

Surface Mount :

No

Pin Count :

3

Package :

Bag

JEDEC-95 Code :

TO-237AA

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.95

Number of Elements :

1

Collector Current-Max (IC) :

0.1 A

Subcategory :

Other Transistors

Package Shape :

Round

Supplier Device Package :

TO-237

Voltage - Collector Emitter Breakdown (Max) :

300 V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

1 W

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Package / Case :

TO-237AA

Frequency - Transition :

200MHz

Collector-Emitter Voltage-Max :

300 V