NTE227

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

DC Current Gain-Min (hFE) :

40

Frequency - Transition :

200MHz

Pin Count :

3

Collector-Emitter Voltage-Max :

300 V

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Number of Elements :

1

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

1 W

JESD-30 Code :

O-PBCY-T3

Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 2mA, 20mA

Series :

-

Current - Collector (Ic) (Max) :

100 mA

Collector Current-Max (IC) :

0.1 A

Voltage - Collector Emitter Breakdown (Max) :

300 V

Package / Case :

TO-237AA

Mounting Type :

Through Hole

Number of Terminals :

3

Power Dissipation Ambient-Max :

2 W

Package Shape :

Round

Current - Collector Cutoff (Max) :

100nA (ICBO)

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Product Status :

Active

Supplier Device Package :

TO-237

Subcategory :

Other Transistors

Operating Temperature :

150°C (TJ)

JEDEC-95 Code :

TO-237AA

Manufacturer :

NTE Electronics

HTS Code :

8541.21.00.95

Surface Mount :

No

Terminal Form :

THROUGH-HOLE

Power - Max :

850 mW

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V