NTE224

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

10 W

Power - Max :

10W

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Supplier Device Package :

TO-39 W/flange?

Voltage - Collector Emitter Breakdown (Max) :

60V

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Max Collector Current :

2 A

Collector Base Voltage (VCBO) :

60 V

Max Operating Temperature :

175 °C

Terminal Form :

PIN/PEG

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Package :

Bag

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Frequency - Transition :

300MHz

Manufacturer :

NTE Electronics

Product Status :

Active

Transistor Application :

AMPLIFIER

Mount :

Through Hole

Number of Terminals :

3

Min Operating Temperature :

-65 °C

Gain :

-

JESD-30 Code :

O-MBFM-P3

Terminal Position :

BOTTOM

Configuration :

Single

Transistor Element Material :

SILICON

Package Shape :

Round

HTS Code :

8541.29.00.75

Power Dissipation Ambient-Max :

10 W

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500mA, 5V

Series :

-

Surface Mount :

No

Operating Temperature :

175°C (TJ)

Pin Count :

3

Number of Pins :

4

Package / Case :

TO-39 W/flange?

Case Connection :

COLLECTOR

RoHS :

Non-Compliant

Subcategory :

Other Transistors

Current - Collector (Ic) (Max) :

2A

Collector Current-Max (IC) :

2 A

Emitter Base Voltage (VEBO) :

4 V