NTE229

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Wire

Power Gain-Min (Gp) :

28 dB

Noise Figure (dB Typ @ f) :

6dB @ 45MHz

Surface Mount :

No

Transistor Element Material :

SILICON

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

50mA

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Collector-Base Capacitance-Max :

0.4 pF

Frequency - Transition :

500MHz

Package :

Bag

Qualification Status :

Not Qualified

Number of Terminals :

3

Manufacturer :

NTE Electronics

Collector Current-Max (IC) :

0.05 A

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Product Status :

Active

HTS Code :

8541.21.00.75

Pin Count :

3

Voltage - Collector Emitter Breakdown (Max) :

30V

Terminal Position :

BOTTOM

JESD-30 Code :

O-PBCY-W3

Subcategory :

Other Transistors

Power Dissipation-Max (Abs) :

0.425 W

Package Shape :

Round

Series :

-

Polarity/Channel Type :

NPN

Gain :

28dB

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Number of Elements :

1

DC Current Gain-Min (hFE) :

30

Collector-Emitter Voltage-Max :

40 V

Operating Temperature :

150°C (TJ)

Supplier Device Package :

TO-92

Configuration :

Single

JEDEC-95 Code :

TO-92

Reach Compliance Code :

Unknown

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 10V

ECCN Code :

EAR99

Power - Max :

425mW