NTE229

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation-Max (Abs) :

0.425 W

Number of Terminals :

3

Collector-Base Capacitance-Max :

0.4 pF

Current - Collector (Ic) (Max) :

50mA

Noise Figure (dB Typ @ f) :

6dB @ 45MHz

Collector-Emitter Voltage-Max :

40 V

Surface Mount :

No

Subcategory :

Other Transistors

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

30V

Terminal Position :

BOTTOM

Terminal Form :

Wire

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 10V

Package Shape :

Round

Product Status :

Active

JESD-30 Code :

O-PBCY-W3

Collector Current-Max (IC) :

0.05 A

ECCN Code :

EAR99

Gain :

28dB

Manufacturer :

NTE Electronics

Package :

Bag

DC Current Gain-Min (hFE) :

30

Transistor Type :

NPN

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JEDEC-95 Code :

TO-92

Power Gain-Min (Gp) :

28 dB

Series :

-

Configuration :

Single

Qualification Status :

Not Qualified

Number of Elements :

1

Pin Count :

3

HTS Code :

8541.21.00.75

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Power - Max :

425mW

Operating Temperature :

150°C (TJ)

Frequency - Transition :

500MHz

Supplier Device Package :

TO-92

Transistor Application :

AMPLIFIER