TRD236DT4

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Mfr.Part #
TRD236DT4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 400V 4A DPAK
Stock
15,567
In Stock :
15,567

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
1.3V
Max Breakdown Voltage :
400V
Power - Max :
35W
Base Part Number :
TRD236
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 600mA, 2.5A
Transistor Application :
SWITCHING
Number of Elements :
1
RoHS Status :
RoHS Compliant
Max Power Dissipation :
35W
Mount :
Surface Mount
hFE Min :
8
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
250μA
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Element Configuration :
Single
Max Collector Current :
4A
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2.5A 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Form :
Gull wing
Emitter Base Voltage (VEBO) :
9V
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Datasheets
TRD236DT4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics TRD236DT4 from Xinshop,where excellence meets affordability. This product stands out with its Base Part Number:TRD236, Number of Terminations:2, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, TRD236DT4 pinout, TRD236DT4 datasheet PDF, TRD236DT4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics TRD236DT4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics TRD236DT4


NPN 150°C TJ 250μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

TRD236DT4 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 600mA, 2.5A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 4A volts at its maximum.

TRD236DT4 Features


the DC current gain for this device is 8 @ 2.5A 5V
the vce saturation(Max) is 1.3V @ 600mA, 2.5A
the emitter base voltage is kept at 9V


TRD236DT4 Applications


There are a lot of STMicroelectronics
TRD236DT4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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