2N2905A

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

Package / Case :

TO-205AD, TO-39-3 Metal Can

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

600mW

Radiation Hardening :

No

Operating Temperature :

-65°C~200°C TJ

Max Operating Temperature :

200°C

Power - Max :

800mW

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

60V

Min Operating Temperature :

-65°C

Max Power Dissipation :

800mW

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

60V

Current - Collector (Ic) (Max) :

600mA

Supplier Device Package :

TO-39 (TO-205AD)

Number of Pins :

3

Factory Lead Time :

12 Weeks

Max Collector Current :

600mA

Number of Elements :

1

Polarity :

PNP

Mount :

Through Hole

Current - Collector Cutoff (Max) :

1μA