2N3773G
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- Mfr.Part #
- 2N3773G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 16A TO204
- Stock
- 980
- In Stock ：
- 980
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 16A
- Voltage - Rated DC :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Factory Lead Time :
- 10 Weeks
- Height :
- 8.51mm
- Current - Collector Cutoff (Max) :
- 10mA
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Max Collector Current :
- 16A
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-204AA, TO-3
- JESD-609 Code :
- e3
- Terminal Form :
- PIN/PEG
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Published :
- 2004
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 140V
- Width :
- 26.67mm
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 2
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 150W
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tray
- Weight :
- 13.607771g
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Pbfree Code :
- yes
- Base Part Number :
- 2N3773
- Collector Emitter Saturation Voltage :
- 1.4V
- Number of Terminations :
- 2
- Power Dissipation :
- 150W
- Length :
- 39.37mm
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- hFE Min :
- 15
- Datasheets
- 2N3773G
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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