2N3866A

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Configuration :

Single

Emitter Base Voltage (VEBO) :

3.5V

Mount :

Through Hole

Transistor Type :

NPN

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Bulk

Published :

2007

Frequency - Transition :

400MHz

Frequency :

800MHz

Max Power Dissipation :

1W

Number of Terminations :

3

Power Dissipation :

1W

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

30V

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~200°C TJ

Transistor Element Material :

SILICON

Number of Pins :

3

Terminal Form :

Wire

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Mounting Type :

Through Hole

Max Collector Current :

400mA

Number of Elements :

1

Terminal Position :

BOTTOM

RoHS Status :

Non-RoHS Compliant