2N4923G

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Mfr.Part #
2N4923G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 1A TO126
Stock
3,194
In Stock :
3,194

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
11.0998mm
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
hFE Min :
40
Collector Emitter Voltage (VCEO) :
80V
Number of Pins :
3
Transition Frequency :
3MHz
Max Collector Current :
1A
Max Power Dissipation :
30W
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
2.9972mm
JESD-609 Code :
e3
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Collector Emitter Saturation Voltage :
600mV
Voltage - Rated DC :
80V
Current Rating :
1A
Published :
2006
Current - Collector Cutoff (Max) :
500μA
Transistor Type :
NPN
Transistor Element Material :
SILICON
Package / Case :
TO-225AA, TO-126-3
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Lead Free :
Lead Free
Gain Bandwidth Product :
3MHz
Factory Lead Time :
6 Weeks
Surface Mount :
No
Pin Count :
3
Polarity/Channel Type :
NPN
Operating Temperature :
-65°C~150°C TJ
Frequency :
3MHz
Halogen Free :
Halogen Free
Weight :
4.535924g
ECCN Code :
EAR99
Length :
7.7978mm
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 500mA 1V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Radiation Hardening :
No
Base Part Number :
2N4923
Terminal Finish :
Tin (Sn)
Power Dissipation :
30W
Datasheets
2N4923G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N4923G from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:2N4923, 2N4923G pinout, 2N4923G datasheet PDF, 2N4923G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N4923G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N4923G


NPN -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

2N4923G Overview


This device has a DC current gain of 30 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 1A volts is possible.

2N4923G Features


the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz


2N4923G Applications


There are a lot of ON Semiconductor
2N4923G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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