2N5401

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

50

Element Configuration :

Single

Terminal Position :

BOTTOM

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

PNP

Pbfree Code :

No

Number of Elements :

1

Collector Emitter Breakdown Voltage :

150V

Transition Frequency :

100MHz

Factory Lead Time :

8 Weeks

Emitter Base Voltage (VEBO) :

5V

Qualification Status :

Not Qualified

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2012

Power Dissipation-Max :

625mW

Number of Terminations :

3

HTS Code :

8541.21.00.95

Max Operating Temperature :

150°C

Collector Base Voltage (VCBO) :

160V

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

600mA

DC Current Gain-Min (hFE) :

60

JESD-609 Code :

e0

Package / Case :

TO-92

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

300MHz

Continuous Collector Current :

-600mA

Mount :

Through Hole

JESD-30 Code :

O-PBCY-T3

Pin Count :

3

ECCN Code :

EAR99

Frequency - Transition :

300MHz

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Voltage (VCEO) :

500mV