2N5400_S00Z
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- Mfr.Part #
- 2N5400_S00Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.6A TO92-3
- Stock
- 38,231
- In Stock ：
- 38,231
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- 2N5400_S00Z
PNP -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Through Hole
2N5400_S00Z Overview
In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.The device exhibits a collector-emitter breakdown at 120V.
2N5400_S00Z Features
the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
2N5400_S00Z Applications
There are a lot of ON Semiconductor
2N5400_S00Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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