2N5400_D75Z
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- Mfr.Part #
- 2N5400_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.6A TO92-3
- Stock
- 12,480
- In Stock ：
- 12,480
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Transistor Type :
- PNP
- Power - Max :
- 625mW
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- 2N5400
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 400MHz
- Datasheets
- 2N5400_D75Z
PNP -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5400_D75Z Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5400_D75Z Features
the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
2N5400_D75Z Applications
There are a lot of ON Semiconductor
2N5400_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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