2N5404
- Mfr.Part #
- 2N5404
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 48,022
- In Stock :
- 48,022
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Element Material :
- SILICON
- DC Current Gain-Min (hFE) :
- 20
- JEDEC-95 Code :
- TO-5
- Supplier Device Package :
- TO-5AA
- Terminal Form :
- Wire
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Collector-Emitter Voltage-Max :
- 80 V
- Current - Collector (Ic) (Max) :
- 5 A
- Subcategory :
- Transistors
- Current - Collector Cutoff (Max) :
- -
- Polarity/Channel Type :
- PNP
- Power - Max :
- 7 W
- Qualification Status :
- Not Qualified
- Technology :
- Si
- Transistor Polarity :
- PNP
- Collector Current-Max (IC) :
- 5 A
- Reach Compliance Code :
- Compliant
- Package :
- Bulk
- Number of Terminals :
- 3
- VCEsat-Max :
- 0.6 V
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- O-MBCY-W3
- Brand :
- Microchip Technology / Atmel
- Configuration :
- Single
- Number of Elements :
- 1
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Series :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200μA, 2mA
- Frequency - Transition :
- -
- Package Shape :
- Round
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Type :
- PNP
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Power Dissipation-Max (Abs) :
- 1 W
- Datasheets
- 2N5404
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-205AA, TO-5-3 Metal Can Through Hole
2N5404 Overview
In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200μA, 2mA.Supplier device package TO-5AA comes with the product.Voltage of maximal collector-emitter is set to 80 V.The device exhibits a collector-emitter breakdown at 80 V.
2N5404 Features
the DC current gain for this device is -
the vce saturation(Max) is 600mV @ 200μA, 2mA
the supplier device package of TO-5AA
2N5404 Applications
There are a lot of Microchip Technology
2N5404 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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