2N5605
- Mfr.Part #
- 2N5605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 21,835
- In Stock :
- 21,835
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Polarity/Channel Type :
- PNP
- Power - Max :
- 25 W
- Technology :
- Si
- Case Connection :
- COLLECTOR
- Package Shape :
- Round
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Number of Terminals :
- 2
- Reach Compliance Code :
- Compliant
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-213AA
- Package / Case :
- TO-213AA, TO-66-2
- Surface Mount :
- No
- Series :
- -
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 5 A
- Collector-Emitter Voltage-Max :
- 60 V
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector Cutoff (Max) :
- -
- Configuration :
- Single
- Collector Current-Max (IC) :
- 5 A
- Subcategory :
- Transistors
- Product Category :
- Bipolar Transistors - BJT
- Transistor Polarity :
- PNP
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 250μA, 2.5mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain-Min (hFE) :
- 70
- Transistor Element Material :
- SILICON
- Terminal Form :
- PIN/PEG
- Supplier Device Package :
- TO-66 (TO-213AA)
- Product Type :
- BJTs - Bipolar Transistors
- Frequency - Transition :
- -
- Brand :
- Microchip Technology / Atmel
- Datasheets
- 2N5605
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-213AA, TO-66-2 Through Hole
2N5605 Overview
This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 250μA, 2.5mA means Ic has reached its maximum value(saturated).Product package TO-66 (TO-213AA) comes from the supplier.60 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 60 VV - Maximum voltage.
2N5605 Features
the DC current gain for this device is -
the vce saturation(Max) is 750mV @ 250μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)
2N5605 Applications
There are a lot of Microchip Technology
2N5605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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