2N5610

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Mfr.Part #
2N5610
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
POWER BJT
Stock
46,979
In Stock :
46,979

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Product Status :
Active
Voltage - Collector Emitter Breakdown (Max) :
80 V
Frequency - Transition :
-
JEDEC-95 Code :
TO-66
Number of Elements :
1
Power Dissipation-Max (Abs) :
25 W
Manufacturer :
Microchip
JESD-30 Code :
O-MBFM-P2
Package Shape :
Round
Terminal Position :
BOTTOM
Brand :
Microchip Technology / Atmel
Operating Temperature :
-65°C ~ 200°C (TJ)
DC Current Gain-Min (hFE) :
70
Subcategory :
Transistors
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Product Type :
BJTs - Bipolar Transistors
Transistor Polarity :
NPN
Product Category :
Bipolar Transistors - BJT
Current - Collector Cutoff (Max) :
-
Polarity/Channel Type :
NPN
Configuration :
Single
Package / Case :
TO-213AA, TO-66-2
Reach Compliance Code :
Unknown
Collector-Emitter Voltage-Max :
80 V
Terminal Form :
PIN/PEG
Series :
-
Technology :
Si
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 2.5mA
Package :
Bulk
Transistor Type :
PNP
Supplier Device Package :
TO-66 (TO-213AA)
Surface Mount :
No
Transistor Application :
AMPLIFIER
Number of Terminals :
2
Collector Current-Max (IC) :
5 A
Current - Collector (Ic) (Max) :
5 A
Transistor Element Material :
SILICON
Power - Max :
25 W
Case Connection :
COLLECTOR
VCEsat-Max :
1.5 V
Datasheets
2N5610
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5610 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, 2N5610 pinout, 2N5610 datasheet PDF, 2N5610 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5610 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

2N5610 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 2.5mA.Product comes in the supplier's device package TO-66 (TO-213AA).80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.

2N5610 Features


the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 500μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)


2N5610 Applications


There are a lot of Microchip Technology
2N5610 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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