2SA2013-TD-E
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- Mfr.Part #
- 2SA2013-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 4A PCP
- Stock
- 790
- In Stock ：
- 790
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 360MHz
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Max Frequency :
- 360MHz
- Radiation Hardening :
- No
- Published :
- 2012
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -6V
- hFE Min :
- 200
- Length :
- 4.5mm
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Width :
- 2.5mm
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.3W
- Gain Bandwidth Product :
- 360MHz
- Max Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 2A
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Power - Max :
- 3.5W
- JESD-609 Code :
- e6
- Transistor Element Material :
- SILICON
- Height :
- 1.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Frequency - Transition :
- 400MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 7 Weeks
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- -200mV
- Datasheets
- 2SA2013-TD-E
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA2013-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 340mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 360MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
2SA2013-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 340mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 360MHz
2SA2013-TD-E Applications
There are a lot of ON Semiconductor
2SA2013-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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