2SA2013-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

JESD-609 Code :

e6

Factory Lead Time :

7 Weeks

Max Breakdown Voltage :

50V

Frequency - Transition :

400MHz

Max Power Dissipation :

1.3W

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

340mV @ 100mA, 2A

Collector Base Voltage (VCBO) :

-50V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Collector Emitter Saturation Voltage :

-200mV

Gain Bandwidth Product :

360MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Position :

Dual

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

1μA ICBO

Element Configuration :

Single

Operating Temperature :

150°C TJ

Transistor Type :

PNP

Max Frequency :

360MHz

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pbfree Code :

yes

Transition Frequency :

360MHz

Published :

2012

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Emitter Base Voltage (VEBO) :

-6V

Height :

1.5mm

Lead Free :

Lead Free

Package / Case :

TO-243AA

Width :

2.5mm

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

4A

Length :

4.5mm

Terminal Form :

Flat

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Pin Count :

3

Packaging :

Tape and Reel (TR)

hFE Min :

200

Power - Max :

3.5W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1