2SA2016-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

290MHz

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Max Collector Current :

7A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Operating Temperature :

150°C TJ

Configuration :

Single

Factory Lead Time :

9 Weeks

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Power - Max :

3.5W

Max Power Dissipation :

3.5W

Collector Emitter Saturation Voltage :

240mV

Gain Bandwidth Product :

330MHz

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

400mV @ 40mA, 2A

Pbfree Code :

yes

Pin Count :

3

Collector Base Voltage (VCBO) :

50V

hFE Min :

200

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Published :

2012

Surface Mount :

yes

Terminal Form :

Flat

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-243AA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Type :

PNP

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e6

Power Dissipation :

1.3W

Case Connection :

COLLECTOR