2SA2016-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

240mV

Reach Compliance Code :

not_compliant

Max Collector Current :

7A

Pbfree Code :

yes

Transistor Element Material :

SILICON

Published :

2012

Factory Lead Time :

9 Weeks

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

6V

Polarity/Channel Type :

PNP

Power - Max :

3.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Position :

Single

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transistor Type :

PNP

Case Connection :

COLLECTOR

Configuration :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

50V

Power Dissipation :

1.3W

Mounting Type :

Surface Mount

hFE Min :

200

Vce Saturation (Max) @ Ib, Ic :

400mV @ 40mA, 2A

Number of Pins :

3

Max Power Dissipation :

3.5W

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Package / Case :

TO-243AA

RoHS Status :

ROHS3 Compliant

Transition Frequency :

290MHz

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e6

Number of Terminations :

3

Gain Bandwidth Product :

330MHz

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V