2SA2012-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

420MHz

Number of Elements :

1

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

30V

Mounting Type :

Surface Mount

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

210mV @ 30mA, 1.5A

Case Connection :

COLLECTOR

Height :

1.5mm

Width :

2.5mm

Number of Terminations :

3

Reach Compliance Code :

not_compliant

JESD-609 Code :

e6

Lead Free :

Lead Free

Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

30V

Terminal Position :

Single

Transition Frequency :

350MHz

Polarity/Channel Type :

PNP

Published :

2010

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-260mV

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

9 Weeks

Transistor Type :

PNP

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

3.5W

Length :

4.5mm

Max Collector Current :

5A

Max Frequency :

1MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Package / Case :

TO-243AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

30V