2SD1048-6-TB-E

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Mfr.Part #
2SD1048-6-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 15V 0.7A 3CP
Stock
2,580
In Stock :
2,580

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Power Dissipation :
200mW
Polarity/Channel Type :
NPN
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Max Breakdown Voltage :
15V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Collector Current :
700mA
Collector Base Voltage (VCBO) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
2.9mm
Terminal Position :
Dual
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
7 Weeks
Published :
2012
Collector Emitter Voltage (VCEO) :
15V
Number of Pins :
3
Height :
1.1mm
Collector Emitter Breakdown Voltage :
15V
Number of Terminations :
3
hFE Min :
200
Number of Elements :
1
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Pin Count :
3
Width :
1.5mm
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Operating Temperature :
125°C TJ
Vce Saturation (Max) @ Ib, Ic :
80mV @ 10mA, 100mA
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 50mA 2V
Pbfree Code :
yes
Frequency :
250MHz
ECCN Code :
EAR99
Transition Frequency :
250MHz
JESD-609 Code :
e6
Collector Emitter Saturation Voltage :
80mV
Transistor Type :
NPN
Surface Mount :
yes
Element Configuration :
Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Power Dissipation :
200mW
Datasheets
2SD1048-6-TB-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1048-6-TB-E from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, Operating Temperature:125°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SD1048-6-TB-E pinout, 2SD1048-6-TB-E datasheet PDF, 2SD1048-6-TB-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1048-6-TB-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1048-6-TB-E


NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SD1048-6-TB-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.

2SD1048-6-TB-E Features


the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz


2SD1048-6-TB-E Applications


There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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