2SD1048-6-TB-E
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- Mfr.Part #
- 2SD1048-6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,580
- In Stock ：
- 2,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 7 Weeks
- Max Collector Current :
- 700mA
- Length :
- 2.9mm
- Transistor Type :
- NPN
- Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- Transition Frequency :
- 250MHz
- Max Breakdown Voltage :
- 15V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 15V
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 80mV
- Width :
- 1.5mm
- hFE Min :
- 200
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Frequency :
- 250MHz
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Temperature :
- 125°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2SD1048-6-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-6-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SD1048-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-6-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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