2SD1048-6-TB-E
- Mfr.Part #
- 2SD1048-6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Breakdown Voltage :
- 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Collector Current :
- 700mA
- Collector Base Voltage (VCBO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.9mm
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 7 Weeks
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Pins :
- 3
- Height :
- 1.1mm
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Terminations :
- 3
- hFE Min :
- 200
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Width :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 125°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Pbfree Code :
- yes
- Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- JESD-609 Code :
- e6
- Collector Emitter Saturation Voltage :
- 80mV
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- Datasheets
- 2SD1048-6-TB-E

NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-6-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SD1048-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-6-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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