2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 15V
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- hFE Min :
- 300
- Packaging :
- Tape and Reel (TR)
- Length :
- 2.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Frequency :
- 250MHz
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 30mV
- Max Collector Current :
- 700mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 15V
- Operating Temperature :
- 125°C TJ
- JESD-609 Code :
- e6
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Height :
- 1.1mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 20V
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Max Power Dissipation :
- 200mW
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 1.5mm
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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