2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- Height :
- 1.1mm
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 15V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 30mV
- Transition Frequency :
- 250MHz
- Max Power Dissipation :
- 200mW
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 20V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 300
- Frequency :
- 250MHz
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Width :
- 1.5mm
- Operating Temperature :
- 125°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Pin Count :
- 3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 700mA
- Max Breakdown Voltage :
- 15V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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