2SD1048-7-TB-E
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- Mfr.Part #
- 2SD1048-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,263
- In Stock ：
- 2,263
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.1mm
- Length :
- 2.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Collector Emitter Saturation Voltage :
- 30mV
- Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 250MHz
- hFE Min :
- 300
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 15V
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 20V
- Width :
- 1.5mm
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2012
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 15V
- Radiation Hardening :
- No
- Frequency :
- 250MHz
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Transistor Type :
- NPN
- Operating Temperature :
- 125°C TJ
- Max Collector Current :
- 700mA
- Surface Mount :
- yes
- JESD-609 Code :
- e6
- Datasheets
- 2SD1048-7-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-7-TB-E Overview
This device has a DC current gain of 200 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 30mV.A VCE saturation (Max) of 80mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 700mA volts is possible.
2SD1048-7-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-7-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-7-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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