2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 38,333
- In Stock ：
- 38,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Base Part Number :
- 2SD2
- Current - Collector (Ic) (Max) :
- 3A
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 25W
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 25W
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 400mV
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- hFE Min :
- 20
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Transition Frequency :
- 3MHz
- Datasheets
- 2SD2012
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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