2SD2017
- Mfr.Part #
- 2SD2017
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 250V 6A TO220F
- Stock
- 14,650
- In Stock :
- 14,650
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 35W
- Polarity :
- NPN
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Max Collector Current :
- 6A
- Collector-Emitter Voltage :
- 250(V)
- Collector Current (DC) :
- 6(A)
- Operating Temp Range :
- -55C to 150C
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- JESD-30 Code :
- R-PSFM-T3
- Collector-Base Voltage :
- 300(V)
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- Package Shape :
- RECTANGULAR
- Frequency - Transition :
- 20MHz
- Manufacturer :
- Sanken Electric Co Ltd
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mount :
- Through Hole
- Series :
- -
- DC Current Gain :
- 2000
- Number of Terminations :
- 3
- Transition Frequency :
- 20MHz
- Mounting :
- Through Hole
- Reach Compliance Code :
- Unknown
- Power Dissipation :
- 35(W)
- Lead Free :
- Lead Free
- Configuration :
- DARLINGTON WITH BUILT-IN RESISTOR
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Maximum Collector Cut-off Current :
- 100
- Package :
- Bulk
- Collector Emitter Breakdown Voltage :
- 250V
- Number of Elements :
- 1
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 40 W
- Supplier Device Package :
- TO-220F
- Product Status :
- Active
- Package / Case :
- TO-220-3 Full Pack
- Package Type :
- TO-220F
- Operating Temperature Classification :
- Military
- Packaging :
- Bulk
- DC Current Gain-Min (hFE) :
- 2000
- Collector Current-Max (IC) :
- 6 A
- Pbfree Code :
- yes
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Terminal Position :
- Single
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 35W
- Collector-Emitter Voltage-Max :
- 250 V
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 6 A
- Emitter-Base Voltage :
- 20(V)
- Rad Hardened :
- No
- Transistor Type :
- NPN - Darlington
- Transistor Application :
- SWITCHING
- Datasheets
- 2SD2017

NPN - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2017 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 2A 2V.When VCE saturation is 1.5V @ 2mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 20MHz.Supplier package TO-220F contains the product.Voltage maximal between collector and emitter is set to 250 V.The device has a 250 V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 6A volts can be achieved.
2SD2017 Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 2mA, 2A
a transition frequency of 20MHz
the supplier device package of TO-220F
2SD2017 Applications
There are a lot of Sanken
2SD2017 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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