BC847,235
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- Mfr.Part #
- BC847,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC847 - SMALL SIGNAL BI
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Base Part Number :
- BC847
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Max Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- BC847,235
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847,235 Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC847,235 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,235 Applications
There are a lot of Nexperia USA Inc.
BC847,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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