BC847AW,135
- Mfr.Part #
- BC847AW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847AW - SMALL SIG
- Stock
- 200,000
- In Stock :
- 200,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2014
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC847
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Datasheets
- BC847AW,135

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847AW,135 Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847AW,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847AW,135 Applications
There are a lot of Nexperia USA Inc.
BC847AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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