BC856B

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

-65V

Number of Terminations :

3

Pbfree Code :

yes

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

200MHz

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

Factory Lead Time :

19 Weeks

Collector Emitter Breakdown Voltage :

-65V

Length :

3.05mm

Gain Bandwidth Product :

200MHz

Pin Count :

3

Polarity/Channel Type :

PNP

Number of Elements :

1

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Emitter Base Voltage (VEBO) :

-5V

Width :

1.4mm

Mount :

Surface Mount

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

45V

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

Weight :

7.994566mg

Max Power Dissipation :

300mW

Max Collector Current :

-100mA

Operating Temperature :

-65°C~150°C TJ

Transition Frequency :

200MHz

Collector Emitter Saturation Voltage :

-250mV

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

65V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

-80V

Contact Plating :

Tin

hFE Min :

220

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

15nA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BC856B

Published :

2005

Terminal Position :

Dual

Power Dissipation :

310mW

Height :

1.1mm

JESD-609 Code :

e3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Radiation Hardening :

No