BC858W,135

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Mfr.Part #
BC858W,135
Manufacturer
NXP Semiconductors
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
NOW NEXPERIA BC858W - SMALL SIGN
Stock
17,751
In Stock :
17,751

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
200mW
Collector Emitter Voltage (VCEO) :
30V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Max Collector Current :
100mA
Operating Temperature :
150°C TJ
Base Part Number :
BC858
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
100MHz
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Mounting Type :
Surface Mount
Number of Terminations :
3
Series :
Automotive, AEC-Q101
Radiation Hardening :
No
Collector-Base Capacitance-Max :
5pF
Collector Emitter Breakdown Voltage :
30V
Max Power Dissipation :
200mW
Gain Bandwidth Product :
100MHz
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
PNP
Contact Plating :
Tin
ECCN Code :
EAR99
Mount :
Surface Mount
Factory Lead Time :
4 Weeks
Published :
2009
Frequency :
100MHz
Current - Collector Cutoff (Max) :
15nA ICBO
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
30V
Pin Count :
3
Transistor Application :
SWITCHING
Number of Elements :
1
Package / Case :
SC-70, SOT-323
Emitter Base Voltage (VEBO) :
5V
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
125 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
JESD-609 Code :
e3
Datasheets
BC858W,135
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC858W,135 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BC858, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:SC-70, SOT-323, Number of Pins:3, BC858W,135 pinout, BC858W,135 datasheet PDF, BC858W,135 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC858W,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC858W,135


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

BC858W,135 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC858W,135 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC858W,135 Applications


There are a lot of Nexperia USA Inc.
BC858W,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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