BCW32LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

100mA

Width :

1.4mm

JESD-609 Code :

e3

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

32V

Terminal Position :

Dual

Contact Plating :

Tin

REACH SVHC :

No SVHC

Pbfree Code :

yes

Terminal Form :

Gull wing

Base Part Number :

BCW32

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

32V

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

hFE Min :

200

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

250mV

Published :

2005

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

32V

Max Power Dissipation :

225mW

Power Dissipation :

300mW

Max Breakdown Voltage :

32V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Number of Terminations :

3

Surface Mount :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Height :

1.11mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Max Frequency :

1MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Collector Emitter Voltage (VCEO) :

32V

Transistor Type :

NPN

Number of Elements :

1

Length :

3.04mm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Max Collector Current :

100mA