BCW33LT3G
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- Mfr.Part #
- BCW33LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23-3
- Stock
- 36,709
- In Stock ：
- 36,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Frequency :
- 1MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Height :
- 1.11mm
- hFE Min :
- 420
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 32V
- Base Part Number :
- BCW33
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 32V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 32V
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 250mV
- Width :
- 2.64mm
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Datasheets
- BCW33LT3G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW33LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.
BCW33LT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
BCW33LT3G Applications
There are a lot of ON Semiconductor
BCW33LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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